LEC 2025 Program Schedule
Special Events
- Sunday, 8/10 – Welcome Reception Gator F Club, Ben Hill Griffin Stadium North End Zone Time: 6pm-8pm
- Monday, 8/11 – Student Game Night (NRF, Rm 115)
- Tuesday, 8/12 – Joint Reception with SiC+X Workshop (MALA, Rm 7200)
Monday, August 11 – Oral Presentations
Malachowsky Hall, NVIDIA Auditorium (Rm 1000)
| Time | Session/Event | Author | Affiliation | Title |
|---|---|---|---|---|
| 07:00 | Breakfast | Malachowsky Hall, Rm 7200 | ||
| 08:00 | Session 1 Chairs: Travis Anderson, Rongming Chu | David Meyer | DARPA | Plenary - UWBG Semiconductors: The Next Revolution in High Performance Electronics |
| 08:40 | Session 1 | Zetian Mi | University of Michigan | Invited - Ultrawide Bandgap Ferroelectric Nitride Semiconductors for High Temperature Electronics |
| 09:05 | Session 1 | Xuiling Li | University of Texas - Austin | Invited - Enabling High-Performance (U)WBG Devices through Innovative Growth and Fabrication Approaches |
| 09:30 | Session 1 | Srabanti Chowdhury | Stanford | Invited - CAVET at 20: Lessons from Two Decades of Power Switching Innovation |
| 09:55 | Break | Coffee Break - Malachowsky Hall, Rm 1030 | ||
| 10:15 | Session 2 Chairs: Shubhra Pasayat, Yu Cao | Leland Nordin | University of Central Florida | Invited - High-Performance, Low-Cost Mid-Infrared Optoelectronic Devices |
| 10:40 | Session 2 | Surjava Sanyal | University of Wisconsin, Madison (Student) | Influence of Electron Blocking Layer on the Optical Properties of Red InGaN MicroLEDs on Porous Substrates |
| 10:55 | Session 2 | Zachary Hargus | University of Florida (Student) | Characterization of n-type doping efficiency in Si-doped Al-polar and N-polar epitaxially grown AlN films |
| 11:10 | Session 2 | Daniel Francis | Akash Systems | Invited - GaN in and on diamond, 3D diamond, and interface engineering for low thermal resistance and deployment of GaN-on-diamond in space |
| 11:35 | Session 2 | Hsiao-Hsuan Wan | University of Florida (Student) | kV-class Vertical p-n Heterojunction Rectifier Based on ITO/Diamond |
| 11:50 | Session 2 | Surjava Sanyal | University of Wisconsin, Madison (Student) | Effect of TMIn surfactant on the sheet resistivity of Si-doped n++-GaN regrowth using MOCVD |
| 12:05 | Lunch | Malachowsky Hall, Rm 7200 | ||
| 13:00 | Session 3 Chairs: Chirag Gupta, Jennifer Hite | David Storm | Army Research Laboratory | Invited - Ultrawide Bandgap High Al-Fraction AlGaN for High Power Devices |
| 13:25 | Session 3 | Asif Khan | University of South Carolina | Plenary - Electronic Devices using Extreme Bandgap AlxGa1-xN heterojunctions over bulk AlN |
| 14:05 | Session 3 | Maher Tahhan | Raytheon | Invited - Hetero-Bonding Approach to Realize Ultra-Wide Bandgap p-i-n Diodes |
| 14:30 | Session 3 | Khush Gohel | University of Wisconsin, Madison (Student) | High BFOM (> 350 MW/cm²) Al0.65Ga0.35N Channel MISHEMT with > 2kV breakdown voltage |
| 14:45 | Session 3 | Katharina Loske | University of Florida (Student) | Electrical and Spectroscopic Analysis of High Aluminum-Content AlGaN Schottky Diodes and Photodetectors |
| 15:00 | Session 3 | Bingcheng Da | Arizona State University (Student) | High Current Density AlN Quasi-vertical Schottky Barrier Diodes |
| 15:15 | Break | Coffee Break - Malachowsky Hall, Rm 1030 | ||
| 15:35 | Session 4 Chairs: Ahmad Islam, Bob Kaplar | James Spencer Lundh | U.S. Naval Research Laboratory | Invited - The Next Frontier: Extreme Temperature (1000 °C) Operation of Wide and Ultrawide Bandgap Semiconductor Devices |
| 16:00 | Session 4 | Mark Sheplak | University of Florida | Invited - Towards a High-Frequency Dynamic Pressure Sensor for High-Enthalpy Hypersonic Flows |
| 16:15 | Session 4 | Ruixin Bai | University of Wisconsin, Madison (Student) | Improved Gate Stability in Scaled RF GaN HEMTs Using ALD TiN with Potential for High-Temperature Applications |
| 16:30 | Session 4 | Yixin Xiong | Pennsylvania State University (Student) | GaN Bootstrapping Amplifier IC Operating at up to 800 °C Temperature |
| 16:45 | Session 4 | Ajay Visvkarma | Pennsylvania State University | Robustness of GaN HEMT at 800 ºC in N₂ and Air Ambient |
| 17:00 | Session 4 | Yuxin Du | Pennsylvania State University (Student) | Study of GaN JFET gate leakage induced by heavy ion irradiation |
| 17:15 | Break | |||
| 18:00 | Poster Session | Malachowsky Hall, Room 7200 | ||
| 20:00 | Student Game Night | Nanoscale Research Facility, Rm 115 | ||
Monday, August 11 – Poster Session
Malachowsky Hall, Room 7200
| Poster ID | Author | Affiliation | Title | |
|---|---|---|---|---|
| P1 | Andrew Koehler | U.S. Naval Research Laboratory | III-Nitride Devices for Extreme Temperature Operation | |
| P2 | Withdrawn | |||
| P3 | Daqi Han | Georgia Institute of Technology (Student) | Finite Element Analysis of Static Mechanical Force to Control Piezo-Acoustic Transistors | |
| P4 | Xiang Miao | Georgia Institute of Technology (Student) | Evaluation of Amplifier Topologies for Driving Piezo-Acoustic Transistors | |
| P5 | Jiarui Gong | Texas A&M University | Towards Flat Surface Energy Band on M-Plane GaN and Its Implication for M-Plane GaN Heterojunction Bipolar Transistor Applications | |
| P6 | Owen Meilander | Vanderbilt University (Student) | Gate Leakage Suppression of Enhancement Mode GaN HEMTs on Engineered Substrate | |
| P7 | Eldridge Surianto | Georgia Institute of Technology (Student) | Finite Element Analysis of Inhomogeneity in Varistors with Monte Carlo Method | |
| P8 | Sihang Hui | University of Florida (Student) | Ex-situ surface cleaning of native oxide on N-polar AlN substrates | |
| P9 | Withdrawn | |||
| P10 | Yashas Statapathy | North Carolina State University (Student) | Performance of Proton Irradiated 4H-SiC Low Gain Avalanche Detectors (LGADs) | |
| P11 | Abdulfatai Faro | University of Florida | Late News: (Student) Simulation-Driven Threshold Voltage Engineering in AlGaN/GaN HEMTs via Gate Recess Depth Modulation | |
| P12 | Ruixin Bai | University of Wisconsin, Madison | Late News: (Student) Demonstration of high Johnson’s Figure of Merit (ft x VBR > 20 THz·V) for Ultra-Wide-Bandgap Al0.66Ga0.34N Channel HEMT | |
| P13 | Takuya Maeda | University of Tokyo | Late News: Electrical Characterization of AlN Schottky Barrier Diodes at High Temperature | |
Tuesday, August 12 – Oral Presentations
Malachowsky Hall, NVIDIA Auditorium (Rm 1000)
| Time | Session/Event | Author | Affiliation | Title |
|---|---|---|---|---|
| 07:00 | Breakfast | Malachowsky Hall, Rm 1030 | ||
| 08:00 | Session 5 Chairs: Rongming Chu, Travis Anderson | Reza Ghandi | GE Aerospace | Plenary - Development of Medium Voltage SiC Superjunction Devices |
| 08:40 | Session 5 | Akin Akturk | CoolCad | Invited - Silicon Carbide Electronics in Extreme Environments: High-Voltage Devices and General-Purpose CMOS for High-Radiation and High-Temperature Environments |
| 09:05 | Session 5 | Richard Floyd | Sandia National Labs | Static Electrothermal Study of > 3 kV Co-Packaged MOSFETs and Monolithic BiDFETs |
| 09:20 | Session 5 | Justin Hill | Mainstream Engineering Corporation | Invited - Supply Chain Development of 150 mm Thick-SiC Epiwafers and Improved Transistor Performance through Advanced Gate Oxides |
| 09:45 | Session 5 | Raj Markondeya | Florida International University | Invited - 3D Heterogeneous Integration with Panel-Scale Passive and Active Embedding |
| 10:10 | Break | Coffee Break - Malachowsky Hall, Rm 1030 | ||
| 10:30 | Session 6 Chairs: Mona Ebrish, Jacob Leach | Keisuke Shinohara | Teledyne | Invited - Normally-Off GaN Super-Heterojunction HEMTs with p+GaN Gate |
| 10:55 | Session 6 | Tyler Growden | Air Force Research Laboratory | Invited - High Temperature Performance of Scaled AlGaN/GaN HEMTs |
| 11:20 | Session 6 | Jae-Hyun Ryou | University of Houston | Invited - Ultrawide-Bandgap AlN Thin-Film Piezoelectric Physical Sensors for High-Temperature and Harsh-Environment Applications |
| 11:45 | Session 6 | Mansura Sadek | Pennsylvania State University | Field-dependent Carrier Transport in Implanted Isolation Region of GaN Lateral Power Devices |
| 12:00 | Lunch | Arredondo Café (Reitz Union, 4th floor) | ||
| 13:00 | Session 7 Chairs: Jennifer Hite, Chirag Gupta | Moinnuddin Ahmed | Argonne National Lab | Invited - Machine Learning Based Prediction of Neutron-induced Failure Time of 1200V and 1700V SiC Power Devices |
| 13:25 | Session 7 | Kasey Hogan | Crystal IS | Sponsor - Development and Characterization of 100 mm Bulk AlN Substrates for Next Generation UWBG Electronics |
| 13:45 | Session 7 | Soyeon Kim | Nextron | Sponsor - Compact Micro Probe System for In-Situ Electrical Testing in Various Environments |
| 14:05 | Session 7 | Yuya Yamaoka | Taiyo Nippon Sanso | Sponsor - Taiyo Nippon Sanso compound semiconductor equipment technology |
| 14:25 | Session 7 | Travis Anderson | The Electrochemical Society | Sponsor – Solid State Electronics Research Engagement With ECS. |
| 14:45 | Break | Coffee Break - Malachowsky Hall, Rm 1030 | ||
| 15:05 | Session 8 Chairs: Takuya Maeda, Andrew Koehler | Jim Speck | University of California, Santa Barbara | Invited - Progress in β-Ga2O3 Materials, Physical Properties, and Device Physics for High Voltage Power Electronics |
| 15:30 | Session 8 | Daniel Dryden | Air Force Research Laboratory | Invited - Gallium Oxide at AFRL: Prototyping in the Valley of Death |
| 15:55 | Session 8 | Sriram Krishnamoorty | University of California, Santa Barbara | Invited - High performance Gallium Oxide Power Devices Towards Grid-scale Electronics |
| 16:20 | Session 8 | Jacob Leach | Kyma | Single Event Breakdown in NiOx/β-Ga2O3 Heterojunction diodes with Plasma Etch edge termination |
| 16:35 | Session 8 | Will Brand | Agnitron | β-Ga₂O₃ MOSFETs grown by MOCVD on 2-inch (010) β-Ga₂O₃ Substrates |
| 16:50 | Session 8 | Mark Goorsky | University of California, Los Angeles | Invited - The path of heterogeneous integration for wide bandgap thermal management |
| 17:15 | Award Presentations & Wrap-Up Discussion | |||
| 17:40 | Break | |||
| 18:00 | Joint Reception with SiC+X Workshop | Malachowsky Hall, Rm 7200 | ||
